MODIFICATION OF PZT NUCLEATION AND GROWTH USING OXIDE LAYER IN MULTILAYERED ELECTRODES

The ferroelectric properties of PZT on RuO2 electrodes were compared t o those on RuO2/Pt electrodes. The better hysteretic properties were o btained from Pt/RuO2/PZT/RuO2/Pt ferroelectric capacitors. The enhance ment of ferroelectric properties is likely attributed to the modificat ion in the microstructure of PZT film. The interfacial modification wo uld be affected by the factors such as surface roughness, stress, and porosity of RuO2 film. As the result of the interfacial modification, better quality PZT films are produced, thereby resulting in better fer roelectric properties. We made an effort to understand the relationshi p between the grain size and the coercive voltage in terms of the doma in formation and the domain pinning in connection with defects like gr ain boundaries.