PREPARATION AND ELECTRICAL-PROPERTIES OF HIGH-QUALITY PZT THIN-FILMS ON RUOX ELECTRODE

It has been known that ferroelectric PZT thin films on RuOx electrode exhibit relatively high leakage current level, while they show an outs tanding fatigue property. When the PZT thin film is fabricated by sol- gel process over the RuOx layer, the rosette structures are generally included on the surface of PZT film, which indicates that RuOx layer d oes not offer an favorable environment for the nucleation of perovskit e phase. A novel process completely eliminating the rosette structures on the surface of PZT film was accomplished in this work, with deposi ting thin seed PZT layer at the PZT/RuOx interface by rapid thermal pr ocess (RTP). It was found that the obtained PZT films present very low leakage current level compared to the ordinary PZT/RuOx films with ro sette structures. The main route of current leakage in PZT capacitor w as also discussed.