ROOM-TEMPERATURE AND 77K DIELECTRIC-PROPERTIES OF ACETATE-DERIVED PZT, PLZT, PSZT AND PBZT THIN-FILMS

Ferroelectric thin films in the PZT, PLZT, PBZT (lead barium zirconate titanate) and PSZT (lead stannate zirconate titanate) compositional s ystems were prepared from as-received acetate precursors. Multiple-lay er thin films were fabricated via a spin coating technique and sintere d at 650 - 700 degrees C for two to three minutes per layer, yielding an overall thickness of 0.45 um. The dielectric and ferroelectric hyst eresis loop properties of these films were measured at room temperatur e and 77K. The results show that the thin films experience a substanti al loss (-80% avg.) in dielectric permittivity at 77K and a significan t increase in P-R, E(C) and electrical breakdown strength. The phase t ransformation trends on cooling from room temperature to 77K were from SFE (slim-loop FE)-to-FE and AFE-to-FE. Compositions in these systems show promise for potential low temperature applications.