MICROMORPHOLOGY OF GE AND SI1-XGEX LAYERS GROWN ON SI(001) BY SOLUTION EPITAXY AND THE NEGATIVE-DIFFERENTIAL CONDUCTIVITY ON THE GE LAYER

Authors
MUSSIG HJ KRUGER D HINRICH S HANSSON PO
Citation
Hj. Mussig et al., MICROMORPHOLOGY OF GE AND SI1-XGEX LAYERS GROWN ON SI(001) BY SOLUTION EPITAXY AND THE NEGATIVE-DIFFERENTIAL CONDUCTIVITY ON THE GE LAYER, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1342-1347
Citations number
20
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
1342 - 1347
Database
ISI
SICI code
1071-1023(1995)13:3<1342:MOGASL>2.0.ZU;2-8