SINGLE-CRYSTAL EPITAXIAL GE-BASED OHMIC CONTACT STRUCTURE FOR III-V NANOELECTRONIC AND MESOSCOPIC DEVICES

Authors
DUBEY M JONES KA CASAS LM ECKART D PFEFFER RL
Citation
M. Dubey et al., SINGLE-CRYSTAL EPITAXIAL GE-BASED OHMIC CONTACT STRUCTURE FOR III-V NANOELECTRONIC AND MESOSCOPIC DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(3), 1995, pp. 1358-1363
Citations number
13
Journal title
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena → ACNP
ISSN journal
10711023
Volume
13
Issue
3
Year of publication
1995
Pages
1358 - 1363
Database
ISI
SICI code
1071-1023(1995)13:3<1358:SEGOCS>2.0.ZU;2-D