MONITORING OF DEPOSITION AND DRY-ETCHING OF SI SIGE MULTIPLE STACKS

Deposition and patterning of Si/SiGe multiple stacks have been investi gated by in situ monitoring techniques. Reflection supported interfero metry has been applied to evaluate the thickness and optical parameter s of each of the films during the deposition of the stacks by rapid th ermal chemical vapor deposition. During patterning by reactive ion etc hing of these stacks, the nonselectivity of the etch process has been eluded by monitoring of the 265.1 nm Ge line using optical emission sp ectroscopy. In this way an etch stop can be achieved within any of the thin films of the stack. The results demonstrate an opportunity for i n situ control, including end point detection of deposition and patter ning of Si/SiGe multiple stacks. (C) 1996 American Vacuum Society.