CHARACTERIZATION OF 2-DIMENSIONAL DOPANT PROFILES - STATUS AND REVIEW

The National Technology Roadmap for Semiconductors calls for developme nt of two- and three-dimensional dopant profiling methods for calibrat ion of technology computer-aided design process simulators. We have pr eviously reviewed 2D dopant profiling methods. In this article, we bri efly review methods used to characterize etched transistor cross secti ons by expanding our previous discussion of scanned probe microscopy m ethods. We also mention the need to participate in our ongoing compari son of analysis results for test structures that we have provided the community. (C) 1996 American Vacuum Society.