PRACTICAL PERSPECTIVE OF SHALLOW JUNCTION ANALYSIS

Citation
La. Heimbrook et al., PRACTICAL PERSPECTIVE OF SHALLOW JUNCTION ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 202-212
Citations number
47
Categorie Soggetti
Physics, Applied
ISSN journal
10711023
Volume
14
Issue
1
Year of publication
1996
Pages
202 - 212
Database
ISI
SICI code
1071-1023(1996)14:1<202:PPOSJA>2.0.ZU;2-E
Abstract
This paper will provide an industrial perspective comparing the semico nductor industry's requirements for characterization of ultrashallow j unctions versus the available methods for practical analysis. The cont inued shrinking of integrated circuit features, resulting in more comp lex functions per chip, place increased demands on the analytical labo ratory. The challenge is to balance the need for timely customer respo nse with leading edge analysis of the highest possible precision and a ccuracy. The technical trends, focusing primarily on the current and f uture analysis needs of silicon technology, will be discussed from bot h the customer's and analyst's point of view. The current tools for ch aracterization of ultrashallow dopant profiles and the associated gene ral nanotechnology will be described with emphasis on current measurem ent limitations and future analysis needs from a practical perspective . The gap between the semiconductor industry's analysis needs and the actual information which can currently be provided on shallow junction s will be summarized. (C) 1996 American Vacuum Society.