La. Heimbrook et al., PRACTICAL PERSPECTIVE OF SHALLOW JUNCTION ANALYSIS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 202-212
This paper will provide an industrial perspective comparing the semico
nductor industry's requirements for characterization of ultrashallow j
unctions versus the available methods for practical analysis. The cont
inued shrinking of integrated circuit features, resulting in more comp
lex functions per chip, place increased demands on the analytical labo
ratory. The challenge is to balance the need for timely customer respo
nse with leading edge analysis of the highest possible precision and a
ccuracy. The technical trends, focusing primarily on the current and f
uture analysis needs of silicon technology, will be discussed from bot
h the customer's and analyst's point of view. The current tools for ch
aracterization of ultrashallow dopant profiles and the associated gene
ral nanotechnology will be described with emphasis on current measurem
ent limitations and future analysis needs from a practical perspective
. The gap between the semiconductor industry's analysis needs and the
actual information which can currently be provided on shallow junction
s will be summarized. (C) 1996 American Vacuum Society.