2-DIMENSIONAL DOPANT PROFILING OF SUBMICRON METAL-OXIDE-SEMICONDUCTORFIELD-EFFECT TRANSISTOR USING NONLINEAR LEAST-SQUARES INVERSE MODELING

We present an inverse modeling technique to determine the two-dimensio nal (2D) dopant profile of a metal-oxide-semiconductor field-effect tr ansistor from electrical measurements. In our method, the profile is f ormulated using two tensor product splines (TPSs). This analytical rep resentation is general, compact, and flexible. It simplifies the profi le determination problem to the extraction of the TPS coefficients fro m experimental data. We show the results of applying the new technique on data collected from a sub-0.5 mu m complementary metal-oxide-semic onductor technology with various source/drain implants. We also compar e the measured and simulated I-V and C-V characteristics. The results illustrate the importance of accurate 2D dopant profiles for short-cha nnel device simulation and modeling. (C) 1996 American Vacuum Society.