PHYSICAL CHARACTERIZATION OF 2-DIMENSIONAL DOPING PROFILES FOR PROCESS MODELING

Physical characterization of doping profiles in two dimensions holds g reat promise for both high quality analysis of specific structures and for general physical model verification. This latter activity enables the calibration of process simulators and could lead to accurate pred ictive simulation of modem integrated circuit devices. mie used both o ne- and two-dimensional analytical techniques [secondary-ion-mass spec troscopy (SIMS) and transmission electron microscopy (TEM)] to quantit atively characterize implanted and rapid-thermal-annealed dopant profi les at a polysilicon gate edge, The samples were given self-aligned ar senic implants of 1x10(15) ions/cm(2) at 35 and 120 keV and at 0 degre es and 20 degrees angles of incidence. The implant was followed by a 3 0 s/1000 degrees C rapid thermal anneal. SIMS profiles were used to ca librate 1D simulations and the TEM micrographs in the 1D regions far f rom the mask edge. Quantitative TEM micrographs near the gate edge wer e then compared with two-dimensional simulations of final doping distr ibutions, and the implications of discrepancies are discussed. (C) 199 6 American Vacuum Society.