3-DIMENSIONAL MODELING OF LOW-DOSE BF2-CRYSTALLINE SILICON( IMPLANTATION INTO SINGLE)

Three-dimensional (3D) simulations of 15 keV BF2+ implantation into (1 00) Si for an ion dose of 1x10(13) cm(-2) are performed using the bina ry collision code Crystal-TRIM. At this relatively low dose, damage ac cumulation during ion bombardment can be neglected. For a given area a t the target surface irradiated by the ion beam and impenetrable masks , 3D range distributions can therefore be calculated by the superposit ion of ''point response'' profiles. The influence of channeling effect s on the 3D boron range distribution in channeling and tilt-angle impl antations are studied in detail. In addition to the simulation of 3D p rofiles, the depth distributions of boron and fluorine are compared wi th recently published experimental data. (C) 1996 American Vacuum Soci ety.