Gl. Liu et al., ACCURATE SECONDARY-ION MASS-SPECTROMETRY ANALYSIS OF SHALLOW DOPING PROFILES IN SI BASED ON THE INTERNAL STANDARD METHOD, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 324-328
An accurate quantitative analysis of shallow dopant profiling has been
investigated by secondary ion mass spectrometry (SIMS) with an intern
al standard method. In this method, the internal standard layer is for
med by polycrystalline silicon (poly-Si) deposition and followed by st
andard ion implantation on the Si substrate to be measured. The reprod
ucibility of the measurements for the dopant profiles in the substrate
is found to be less than +/-5%. A chemical absolute quantitative anal
ysis of implanted dosage is also proposed. The dopant profiles in Si s
ubstrates obtained by the internal standard SIMS method, calibrated by
the chemical analysis, agree well with the results of capacitance-vol
tage measurements for metal-oxide-semiconductor diodes. The practical
usefulness of the internal standard SIMS method for quantitative dopan
t profiling is demonstrated by analyzing typical doping profiles in de
vice fabrication processes. (C) 1996 American Vacuum Society.