SURFACE METAL CONTAMINATION DURING ION-IMPLANTATION - COMPARISON OF MEASUREMENTS BY SECONDARY-ION MASS-SPECTROSCOPY, TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY, AND VAPOR-PHASE DECOMPOSITION USED IN CONJUNCTION WITH GRAPHITE-FURNACE ATOMIC-ABSORPTION SPECTROMETRY AND INDUCTIVELY-COUPLED PLASMA-MASS SPECTROMETRY
Mr. Frost et al., SURFACE METAL CONTAMINATION DURING ION-IMPLANTATION - COMPARISON OF MEASUREMENTS BY SECONDARY-ION MASS-SPECTROSCOPY, TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY, AND VAPOR-PHASE DECOMPOSITION USED IN CONJUNCTION WITH GRAPHITE-FURNACE ATOMIC-ABSORPTION SPECTROMETRY AND INDUCTIVELY-COUPLED PLASMA-MASS SPECTROMETRY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(1), 1996, pp. 329-335
Among the many challenges being addressed by manufacturers and users o
f ion implanters is the reduction of contamination of wafers during im
plantation by metals such as Al, Fe, Cr, Na, Cu, Mo, and W. Reproducib
le and accurate measurement of this near-surface contamination is equa
lly challenging for analytical techniques and analysts. For this study
As+ and BF2+ implants were made into Si wafers to study sources of me
tals contamination and to provide samples to be analyzed by a variety
of techniques for comparison of their analytical strengths and weaknes
ses. Analytical techniques chosen for evaluation were quadrupole and m
agnetic sector secondary ion mass spectrometry, total reflection x-ray
fluorescence spectrometry, and vapor phase decomposition used in conj
unction with both graphite furnace atomic absorption spectrometry and
inductively coupled plasma mass spectrometry. (C) 1996 American Vacuum
Society.