SURFACE METAL CONTAMINATION DURING ION-IMPLANTATION - COMPARISON OF MEASUREMENTS BY SECONDARY-ION MASS-SPECTROSCOPY, TOTAL-REFLECTION X-RAY-FLUORESCENCE SPECTROMETRY, AND VAPOR-PHASE DECOMPOSITION USED IN CONJUNCTION WITH GRAPHITE-FURNACE ATOMIC-ABSORPTION SPECTROMETRY AND INDUCTIVELY-COUPLED PLASMA-MASS SPECTROMETRY

Among the many challenges being addressed by manufacturers and users o f ion implanters is the reduction of contamination of wafers during im plantation by metals such as Al, Fe, Cr, Na, Cu, Mo, and W. Reproducib le and accurate measurement of this near-surface contamination is equa lly challenging for analytical techniques and analysts. For this study As+ and BF2+ implants were made into Si wafers to study sources of me tals contamination and to provide samples to be analyzed by a variety of techniques for comparison of their analytical strengths and weaknes ses. Analytical techniques chosen for evaluation were quadrupole and m agnetic sector secondary ion mass spectrometry, total reflection x-ray fluorescence spectrometry, and vapor phase decomposition used in conj unction with both graphite furnace atomic absorption spectrometry and inductively coupled plasma mass spectrometry. (C) 1996 American Vacuum Society.