2-DIMENSIONAL PROFILING OF LARGE TILT ANGLE, LOW-ENERGY BORON-IMPLANTED STRUCTURE USING SECONDARY-ION MASS-SPECTROMETRY

Experimentally determined two-dimensional dopant maps of implants into semiconductors required for the calibration and verification of proce ss simulation tools used in very large scale integrated (VLSI) circuit design. Direct measurement with currently available techniques is not possible owing to the physical size of the areas in question. Using a specially fabricated structure and a modified secondary-ion mass spec troscopy instrument, it has been possible to measure profiles with hig h spatial resolution and sensitivity. In this article we present the r esults of an investigation of a complex boron implant into silicon, as used in advanced VLSI P-type metal-oxide-semiconductor source-drain r egions, and compare it with results from process simulators. (C) 1996 American Vacuum Society.