ONE-DIMENSIONAL AND 2-DIMENSIONAL CHARACTERIZATION OF POWER METAL-OXIDE-SEMICONDUCTOR STRUCTURE BY SPREADING RESISTANCE PROFILING - FROM THE PROFILES TO THE I-V CURVES

In the last four years the two-dimensional spreading resistance profil ing (2D-SRP) technique has been developed and improved such that it ca n be considered by now an accurate tool for junction delineation. As a consequence, the reliability of process simulators can be tested by c omparing both 2D-SRP and, of course, 1D-SRP experimental results with relative simulations. In this work we apply the 1D- and 2D-SRP techniq ues to a power metal-oxide-semiconductor field effect transistor devic e structure to characterize the doped layers and to measure the channe l length. A channel length of 0.95 mu m has been measured with an accu racy of 0.03 mu m. Attesting to the accuracy of the process simulation , by the use of the experimental results, has an importance which goes beyond the simple confirmation of the implemented modeling. The proce ss simulation results are used as input for device simulation. Therefo re, we further checked the reliability both of the measurements and th e process simulations by comparing the experimental I-V curves of the characterized power metal-oxide-semiconductor structure with those obt ained by the device simulations. This work shows that the use of 1D- a nd 2D-SRP measurements allows us to obtain accurate I-V curves going t hrough process and device simulation. (C) 1996 American Vacuum Society .