STUDY OF ELECTRICAL MEASUREMENT TECHNIQUES FOR ULTRA-SHALLOW DOPANT PROFILING

The evaluation of the doping process requires the ability to measure a ccurate depth profiles. In this study, the accuracy of electrical meas urement techniques is evaluated for the measurement of ultra-shallow d opant profiles. The methods investigated are spreading resistance prof iling, electrochemical capacitance-voltage profiling, differential Hal l effect profiling, tapered-groove profilometry, and a new method call ed microwave surface impedance profiling. The focus of this article is the comparative study of the different methods and an evaluation of t he accuracy of the profiles. The study points out details of the measu rements and analysis which are important in obtaining consistent and a ccurate measurements of ultra-shallow junctions. (C) 1996 American Vac uum Society.