2-DIMENSIONAL DOPANT PROFILING OF VERY LARGE-SCALE INTEGRATED DEVICESUSING SELECTIVE ETCHING AND ATOMIC-FORCE MICROSCOPY

We report a detailed mapping of a two-dimensional dopant profile on a fully processed industrial sample with large dynamic range and high sp atial resolution by utilizing a dopant-selective etching process and a tomic force microscopy. The experimental profiling results show excell ent agreement with those obtained from spreading resistance probe and secondary ion mass spectroscopy as corroborative methods. We also disc uss the most critical factors which influence the applicability, repro ducibility, and reliability of this dopant selective etching method. ( C) 1996 American Vacuum Society.