ELECTROLUMINESCENCE ANALYSIS OF THE STRUCTURAL DAMAGE CREATED IN SIO2SI SYSTEMS BY AR ION-IMPLANTATION/

Authors
BOTA S GARRIDO B MORANTE JR BARABAN A KONOROV PP
Citation
S. Bota et al., ELECTROLUMINESCENCE ANALYSIS OF THE STRUCTURAL DAMAGE CREATED IN SIO2SI SYSTEMS BY AR ION-IMPLANTATION/, Solid-state electronics, 39(3), 1996, pp. 355-359
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
3
Year of publication
1996
Pages
355 - 359
Database
ISI
SICI code
0038-1101(1996)39:3<355:EAOTSD>2.0.ZU;2-8
Abstract
The influence of ion implantation of Ar in defect generation in Si/SiO 2 structures is examined by the application of an electroluminescence technique. The nature of the electroluminescence spectra is examined a nd bands at 1.9, 2.7 and 4.3 eV are identified. Each band is related t o different intrinsic defects in the oxide. Structural analysis of the irradiated SiO2 films, performed with i.r. spectroscopy, points to at omic displacements and broken Si-O bonds as the origin of the damage i nduced by the irradiation.