INTERPRETATION OF EXPERIMENTALLY OBSERVED C-T RESPONSES FOR COPPER CONTAMINATED DEVICES

S-PISCES simulations, in conjunction with the zerbst technique, were u sed to examine three different shapes of capacitance-time (C-t) respon ses obtained from pulsed metal-oxide-semiconductor measurement of capa citors contaminated with copper. The three shapes of the C-t curves ca n be explained by using regions with different lifetimes in the simula tions. The low minority carrier lifetime region near the Si/SiO2 inter face correlates with the reported copper secondary ion mass spectromet ry profiles.