EXTENDED THERMIONIC EMISSION-DIFFUSION THEORY OF CHARGE-TRANSPORT THROUGH A SCHOTTKY DIODE

An extended thermionic emission-diffusion theory of charge carrier tra nsport through a Schottky diode is derived considering the effect of t he Richardson constant for electrons passing from the metal to the sem iconductor. As it is evident from the obtained expressions for the cur rent density, the Richardson contact strongly affects the reverse mode of the I-V characteristics. If the ratio of Richardson constants for the metal and semiconductor is larger or smaller than unity, then the reverse current density will be lower or higher, respectively, than th e reverse current density obtained, without considering the above effe ct.