A NEW METHOD FOR MIS IL SILICON SOLAR-CELL SIMULATION/

Authors
DING KB ZHANG XM
Citation
Kb. Ding et Xm. Zhang, A NEW METHOD FOR MIS IL SILICON SOLAR-CELL SIMULATION/, Solid-state electronics, 39(3), 1996, pp. 411-414
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
3
Year of publication
1996
Pages
411 - 414
Database
ISI
SICI code
0038-1101(1996)39:3<411:ANMFMI>2.0.ZU;2-N
Abstract
A new method for MIS inversion layer silicon solar cell evaluation and design is presented, which simultaneously solves Poisson's equation a nd the hole and electron continuity equations in the entire solar cell . The results of the simulation are essentially in agreement with thos e by the previous method. In practice, the new method is more convenie nt than the previous one.