BIAS AND TEMPERATURE DEPENDENCIES OF BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

Authors
LIOU JJ SHEU SH HUANG CI WILLIAMSON DC
Citation
Jj. Liou et al., BIAS AND TEMPERATURE DEPENDENCIES OF BASE AND COLLECTOR LEAKAGE CURRENTS OF ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Solid-state electronics, 39(3), 1996, pp. 415-418
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
3
Year of publication
1996
Pages
415 - 418
Database
ISI
SICI code
0038-1101(1996)39:3<415:BATDOB>2.0.ZU;2-1