The rigorous numerical analysis of charge partitioning in a simple p-n
junction structure is presented. Procedures for extracting the releva
nt terminal charges, based upon the concept of a ''pass-through'' curr
ent, are introduced. The calculation of the pass-through current, the
electrostatic displacement current and the (distinct) current associat
ed with the changes in internal charge distributions are described. Me
thods for dividing the various internal charges into ''quasineutral''
and ''space-charge'' components, are also presented. The results obtai
ned by exact analysis are compared with the predictions of the convent
ional, analytic, charge partitioning models. Significant discrepancies
are found to arise from the simplifications necessary for analytic mo
deling such as the dependence of the partitioning on the ramp speed an
d injection level and asymmetry between switch-on and switch-off trans
ients. The numerical simulation results offer guidance for the future
development of alternative, more accurate, nonquasi-static device mode
ls.