MESOSCOPIC NONUNIFORMITY OF WAFER-ANNEALED SEMIINSULATING INP

Authors
HIRT G WOLF D HOFFMANN B KRETZER U KUHNEL G WOITECH A ZEMKE D MULLER G
Citation
G. Hirt et al., MESOSCOPIC NONUNIFORMITY OF WAFER-ANNEALED SEMIINSULATING INP, Journal of electronic materials, 25(3), 1996, pp. 363-367
Citations number
18
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
3
Year of publication
1996
Pages
363 - 367
Database
ISI
SICI code
0361-5235(1996)25:3<363:MNOWSI>2.0.ZU;2-0
Abstract
We have analyzed the mesoscopic uniformity of as-grown and annealed lo w Fe-doped InP-wafers grown by different methods (LEC/VGF). Both by sc anning photoluminescence measurements and by high resolution point con tact mappings corresponding inhomogeneities on a typical scale of 50-7 0 mu m have been observed, showing that most probably the Fe-distribut ion is nonuniform. By comparison with the distribution of etch-pits, a tentative model for their creation is discussed.