HIGH-MOBILITY GA0.47IN0.53AS INP HETEROSTRUCTURE BY ATMOSPHERIC-PRESSURE MOVPE USING CYCLOPENTADIENYL INDIUM/

Authors
USUDA M SATO K TAKEUCHI R ONUMA K UDAGAWA T
Citation
M. Usuda et al., HIGH-MOBILITY GA0.47IN0.53AS INP HETEROSTRUCTURE BY ATMOSPHERIC-PRESSURE MOVPE USING CYCLOPENTADIENYL INDIUM/, Journal of electronic materials, 25(3), 1996, pp. 407-409
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
3
Year of publication
1996
Pages
407 - 409
Database
ISI
SICI code
0361-5235(1996)25:3<407:HGIHBA>2.0.ZU;2-K
Abstract
Lattice-matched Ga(0.4)7In(0.53)As/InP heterostructure was grown by at mospheric-pressure metalorganic vapor phase epitaxy reaction system us ing monovalent cyclopentadienyl indium. The lattice-matched heterostru cture showed electron mobilities of mu(300K) = 12700 cm(2)/Vs at n(s) = 4.2 x 10(11) cm(-2) and mu(77K) = 108000 cm(2)/Vs at n = 3.9 x 10(11 ) cm(-2). The uniformity in electrical properties was measured by Hall element array with 400 mu m pitch. Coefficient of variation in electr on mobility was 0.18%.