SELF-ORGANIZATION PHENOMENON OF STRAINED INGAAS ON INP(311) SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

We have demonstrated that a self-organization phenomenon occurs in str ained InGaAs system on InP (311) substrates grown by metalorganic vapo r phase epitaxy. This suggests that a similar formation process of nan ocrystals exists not only on the GaAs (311)B substrate but also on the InP (311)B substrate. However, the ordering and the size homogeneity of the self-organized nanocrystals are slightly worse than those of th e InGaAs/AIGaAs system on the GaAs (311)B substrate. The tensilely str ained condition of a InGaAs/InP system with growth interruption in a P H3 atmosphere reveals a surface morphology with nanocrystals even on t he InP (100) substrate. It was found that strain energy and high growt h temperature are important factors for self-organization on III-V com pound semiconductors. Preliminary results indicate that the self-organ ized nanostructures in strained InGaAs/InP systems on InP substrates e xhibit room temperature photoluminescent emissions at a wavelength of around 1.3 mu m.