J. Temmyo et al., SELF-ORGANIZATION PHENOMENON OF STRAINED INGAAS ON INP(311) SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 25(3), 1996, pp. 431-437
We have demonstrated that a self-organization phenomenon occurs in str
ained InGaAs system on InP (311) substrates grown by metalorganic vapo
r phase epitaxy. This suggests that a similar formation process of nan
ocrystals exists not only on the GaAs (311)B substrate but also on the
InP (311)B substrate. However, the ordering and the size homogeneity
of the self-organized nanocrystals are slightly worse than those of th
e InGaAs/AIGaAs system on the GaAs (311)B substrate. The tensilely str
ained condition of a InGaAs/InP system with growth interruption in a P
H3 atmosphere reveals a surface morphology with nanocrystals even on t
he InP (100) substrate. It was found that strain energy and high growt
h temperature are important factors for self-organization on III-V com
pound semiconductors. Preliminary results indicate that the self-organ
ized nanostructures in strained InGaAs/InP systems on InP substrates e
xhibit room temperature photoluminescent emissions at a wavelength of
around 1.3 mu m.