REALIZATION OF IN-SITU SUB 2-DIMENSIONAL QUANTUM STRUCTURES BY STRAINED-LAYER GROWTH PHENOMENA IN THE INXGA1-XAS GAAS SYSTEM/

Authors
PAMULAPATI J BHATTACHARYA PK SINGH J BERGER PR SNYDER CW ORR BG TOBER RL
Citation
J. Pamulapati et al., REALIZATION OF IN-SITU SUB 2-DIMENSIONAL QUANTUM STRUCTURES BY STRAINED-LAYER GROWTH PHENOMENA IN THE INXGA1-XAS GAAS SYSTEM/, Journal of electronic materials, 25(3), 1996, pp. 479-483
Citations number
15
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
3
Year of publication
1996
Pages
479 - 483
Database
ISI
SICI code
0361-5235(1996)25:3<479:ROIS2Q>2.0.ZU;2-2
Abstract
We confirm that as the misfit strain in pseudomorphic epitaxial layer increases, surface thermodynamics controlled growth modes can change f rom a layer-by-layer to a three-dimensional (3-D) island mode. Both in -situ reflection high energy electron diffraction studies and in-situ scanning tunneling microscopy studies are utilized to demonstrate this transition to 3-D growth. This concept allows one to grow GaAs/InxGa1 -xAs/GaAs heterostructures where the electrons in InxGa1-xAs are possi bly confined in lower dimensions.