OMVPE GROWN GAINAS-C FOR HBTS

We have grown GaInAs:C by low pressure organometallic vapor phase epit axy and observed that the hole concentration of such layers decreases upon growth of cap layers such as heterojunction bipolar transistor em itter layers. Two mechanisms were found to play a role: one is H repas sivation of the C-As accepters, the other a non-II related decrease in the concentration of C-As accepters due to C changing site or to the formation of complexes involving C-As. Depending on the growth conditi ons of the cap layers (temperature, flow of group V sources), one or t he other mechanism prevails.