SURFACE PASSIVATION OF INP IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR OPTOELECTRONIC INTEGRATION/

Authors
KIM DS CHAO CP BEYZAVI K BURROWS PE FORREST SR
Citation
Ds. Kim et al., SURFACE PASSIVATION OF INP IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR OPTOELECTRONIC INTEGRATION/, Journal of electronic materials, 25(3), 1996, pp. 537-540
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Material Science
Journal title
Journal of electronic materials → ACNP
ISSN journal
03615235
Volume
25
Issue
3
Year of publication
1996
Pages
537 - 540
Database
ISI
SICI code
0361-5235(1996)25:3<537:SPOIIH>2.0.ZU;2-9
Abstract
We report for the first time, a surface passivation technique for InP/ In0.53Ga0.47As heterojunction bipolar transistors that is suitable for optoelectronic integrated circuits. The combination of buffered hydro fluoric acid with high temperature annealing of the surface causes sig nificant increase of the gain at low input currents. Using this techni que, transistors were integrated with photodetectors and other optoele ctronic devices and had current gains as high as 400 even at nanoamper e base currents.