EFFECTS OF INTERFACIAL ROUGHNESS ON THE LEAKAGE PROPERTIES OF SRTIO3 THIN-FILM CAPACITORS

Recent reports on the current-voltage (I-V) characteristics of SrTiO3 and (Ba,Sr)TiO3 thin film capacitors with Pt: electrode suggest that t heir leakage properties are controlled by Schottky emission from catho de. However, their dynamic permittivities obtained from the Schottky p lot are always much smaller than those expected from optical measureme nts. The most plausible approach to explain this disagreement is to in corporate the effect of electric field enhancement due to interfacial roughness into the Schottky emission model. Electric field at the inte rface, for the first order approximation, can be given by [(r+t)/r](V/ t), where r, t and V respectively denote radius of curvature represent ing interfacial roughness, dielectric thickness and applied voltage. T his model predicts that I-V characteristics are the functions of r and V for the ultimate case of r << t. We have closely studied the I-V ch aracteristics of sputter-deposited SrTiO3 films and have obtained the results which strongly support our prediction.