CHARACTERIZATION OF AN N-CHANNEL 1T-1C NONVOLATILE MEMORY CELL USING FERROELECTRIC SRBI2TA2O9 AS THE CAPACITOR DIELECTRIC

This work investigates the feasibility of a 1T-1C memory cell consisti ng of an n-channel transistor and ferroelectric SrBi2Ta2O9 as the capa citor dielectric. 1T-1C ferroelectric memory cells processed through i nterconnect metalization are discussed. Advantages and disadvantages o f two different process sequences are examined. Data indicates that n- channel transistor damage is highly dependent on the process sequence, and that a SrBi2Ta2O9 1T-1C memory cell is fully functional through i nterconnect metalization.