INTEGRATION TECHNOLOGY OF FERROELECTRICS AND THE PERFORMANCE OF THE INTEGRATED FERROELECTRICS

We have successfully incorporated the ferroelectric and the high diele ctric constant capacitors into integrated circuits. The GaAs MMICs wit h BST capacitors have been widely used for cellular phones. The BST te chnology is also applied to a silicon CCD delayline processor for VCRs and camcorders. With respect to the ferroelectric technology with Y1, an experimentally fabricated 256k bit FeRAM has exhibited the remarka ble performance of the 100 ns and 3V operation with a 1T/1C cell confi guration dedicated for the FeRAM. These integrated ferroelectrics have been achieved by controlling the ferroelectric properties in thin fil ms and incorporating the films into GaAs and silicon devices with outs tanding process technology. Furthermore, we refer to the memory cell d esign technology which enables the FeRAM to work below 1V. Various adv antages of low-voltage and high-speed operation inherent in integrated ferroelectrics will be emphasized on the intelligent microelectronics applications toward the next multimedia generation.