DRY-ETCHING OF PT PBZRXTI1-XO3/PT THIN-FILM CAPACITORS IN AN INDUCTIVELY-COUPLED PLASMA (ICP)/

Dry etching of PbZrxTi1-xO3(PZT) and Pt thin films was studied with Cl -2/C2F6Ar gas in an Inductively Coupled Plasma (ICP). The etch rates w ere investigated at various etching conditions including etch gas, coi l RF power, DC bias, and gas pressure. For the etching of PZT film, ch emical enhancement was found. Under etching conditions used in this st udy, the etch rate of 430 to 1500 Angstrom/min was obtained for PZT fi lm and the etch rate of Pt film was in the range of 120 to 1890 Angstr om/min. Selectivity of PZT to Pt was controllable in the range of 0.32 to 6.17. For the fabrication of Pt/PZT/Pt thin film capacitors, the e tching process using the conventional photolithography has been develo ped with high etch rates and good selectivities for both PZT and Pt fi lms.