EFFECT OF CRUCIBLE MATERIALS ON IMPURITIES IN LPE-GAAS

Authors
MO L BUTCHER KSA ALEXIEV D
Citation
L. Mo et al., EFFECT OF CRUCIBLE MATERIALS ON IMPURITIES IN LPE-GAAS, Journal of crystal growth, 160(1-2), 1996, pp. 7-12
Citations number
17
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
160
Issue
1-2
Year of publication
1996
Pages
7 - 12
Database
ISI
SICI code
0022-0248(1996)160:1-2<7:EOCMOI>2.0.ZU;2-8
Abstract
LPE-GaAs grown in carbon, boron nitride and alumina crucibles has been examined using standard characterisation techniques including capacit ance-voltage (C-V) measurements and deep level transient spectroscopy (DLTS). The epitaxial layers have net carrier concentration ranging fr om 5 x 10(14) to 8 x 10(15) carriers per cm(3). DLTS data has shown th at all epitaxial layers have deep level traps.