CD SELF-DIFFUSION IN CU DOPED CDTE

The self-diffusion of Cd into Cu doped CdTe is reported as a function of Cu concentration at 523 and 820 degrees C. Some of the diffusion pr ofiles possessed two components and were fitted by a function composed of the sum of two complementary error functions (erfc) whereas others possessed a single component and were fitted by a single erfc. This i mplied that the diffusion was rate limiting. In addition D-Cd increase d linearly with [Cu] up to a concentration of 3 X 10(18) atoms cm(-3) at both temperatures but at 820 degrees C, D-Cd showed a sudden increa se at concentrations above this value.