LOCATING RADIATION-SENSITIVE ZONES OF INTEGRATED-CIRCUITS USING AN ION-MICROPROBE

An imaging technique is described which produces micron-resolution map s of the single-event upset sensitive regions of integrated circuits d uring ion-irradiation. From these ''upset images'' the identity and si ze of a circuit's upset-prone components can be directly determined. U tilizing a scanning ion-microprobe, the imaging technique selectively exposes the functional units of an integrated circuit (e.g. transistor drains, gates) and immediately measures the effect of high-energy ion strikes on circuit performance. Such detailed spatial characterizatio n provides a precision diagnostic technique with which the study of si ngle-event upset processes in integrated circuits becomes more efficie nt.