ABSOLUTE MEASUREMENT OF TRANSIENT CARRIER CONCENTRATION AND TEMPERATURE-GRADIENTS IN POWER SEMICONDUCTOR-DEVICES BY INTERNAL IR-LASER DEFLECTION

Authors
DEBOY G SOLKNER G WOLFGANG E CLAEYS W
Citation
G. Deboy et al., ABSOLUTE MEASUREMENT OF TRANSIENT CARRIER CONCENTRATION AND TEMPERATURE-GRADIENTS IN POWER SEMICONDUCTOR-DEVICES BY INTERNAL IR-LASER DEFLECTION, Microelectronic engineering, 31(1-4), 1996, pp. 299-307
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
31
Issue
1-4
Year of publication
1996
Pages
299 - 307
Database
ISI
SICI code
0167-9317(1996)31:1-4<299:AMOTCC>2.0.ZU;2-P