SUBSTRATE CROSSTALK IN BICMOS MIXED-MODE INTEGRATED-CIRCUITS

A comparison of several crosstalk reduction schemes using two-dimensio nal device simulation and measurements on silicon has shown that while SOI based processes provide high isolation from crosstalk, fully junc tion isolated wells can provide equal or better crosstalk immunity at a lesser expense, Simple guard ring substrate contacts appear to be th e technique best suited for preventing cross-talk at high operating fr equencies. A lumped parameter equivalent circuit has also been develop ed to simulate fully junction isolated wells in SPICE.