125-145 GHZ STABLE DEPLETION LAYER TRANSFERRED ELECTRON OSCILLATORS

Citation
Mf. Zybura et al., 125-145 GHZ STABLE DEPLETION LAYER TRANSFERRED ELECTRON OSCILLATORS, Solid-state electronics, 39(4), 1996, pp. 547-553
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
39
Issue
4
Year of publication
1996
Pages
547 - 553
Database
ISI
SICI code
0038-1101(1996)39:4<547:1GSDLT>2.0.ZU;2-4
Abstract
In this paper, the improved performance of transferred electron device s utilizing current limiting contacts is clearly illuminated. With the appropriate cathode contact, these devices operate in a novel stable depletion layer mode characterized by an oscillating stable depletion layer rather than an unstable propagating accumulation layer or dipole . A small-signal model is offered to explain the stable small-signal r esistance of the device over a broad frequency range. Large-signal ana lysis is completed using a hydrodynamic device simulator employing the temperature-dependent drift-diffusion equation and Poisson's equation combined with a novel harmonic-balance circuit analysis technique. An alysis of the electric fields, electron concentration, and device temp erature is included for steady-state large-signal operation. Embedding impedances are extracted for a D-band cavity, and performance compari sons are made with experimental data for second-harmonic operation fro m 125 to 145 GHz with excellent correlation. High reliability operatio n and as much as 65 mW of output power at 138 GHz is achievable.