Pg. Mccafferty et al., BARRIER CHARACTERISTICS OF PTSI P-SI SCHOTTKY DIODES AS DETERMINED FROM I-V-T MEASUREMENTS/, Solid-state electronics, 39(4), 1996, pp. 583-592
The current-voltage-temperature characteristics of PtSi/p-Si Schottky
barrier diodes were measured in the temperature range 60-115 K. Deviat
ion of the ideality factor from unity below 80 K may be modelled using
the so-called T-0 parameter with T-0 = 18 K. It is also shown that th
e curvature in the Richardson plots may be remedied by using the flatb
and rather than the zero-bias saturation current density. Physically,
the departure from ideality is interpreted in terms of an inhomogeneou
s Schottky contact. Here we determine a mean barrier height at T = 0 K
, phi(b)(-0) = 223 mV, with an (assumed) Gaussian distribution of stan
dard deviation sigma(phi) = 12.5 mV. These data are correlated with th
e zero-bias barrier height, phi(j)(0) = 192 mV (at T = 90 K), the phot
oresponse barrier height, phi(ph) = 205 mV, and the flatband barrier h
eight, phi(fb) = 214 mV. Finally, the temperature coefficient of the f
latband barrier was found to be -0.121 mV K-1, which is approximately
equal to 1/2(dE(g)(i)/dT), thus suggesting that the Fermi level at the
interface is pinned to the middle of the band gap.