OPTIMIZATION OF PP- JUNCTION TERMINATION FOR NEW POWER DEVICES

Authors
AUSTIN P SANCHEZ JL BERRIANE R
Citation
P. Austin et al., OPTIMIZATION OF PP- JUNCTION TERMINATION FOR NEW POWER DEVICES, Solid-state electronics, 39(4), 1996, pp. 593-599
Citations number
17
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
39
Issue
4
Year of publication
1996
Pages
593 - 599
Database
ISI
SICI code
0038-1101(1996)39:4<593:OOPJTF>2.0.ZU;2-2
Abstract
In this paper PP--type junction termination is investigated. Based on 2D simulations, we have optimized this termination in the 1200-1400 V range under non-punch-through (NPT) and in the 400-600 V range under p unch-through (PT) conditions. We have analysed the influence of the do ping and the length of the lowly-doped P- region on the efficiency of the termination and the influence of charges in the field oxide. These simulation results were then validated using test devices.