SURFACE THERMOPLASMA WAVES AND THEIR INTERACTION WITH FLOW OF CHARGED-PARTICLES AT A SEMICONDUCTOR-METAL INTERFACE

Citation
Vl. Falko et al., SURFACE THERMOPLASMA WAVES AND THEIR INTERACTION WITH FLOW OF CHARGED-PARTICLES AT A SEMICONDUCTOR-METAL INTERFACE, Solid-state electronics, 39(4), 1996, pp. 611-614
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
ISSN journal
00381101
Volume
39
Issue
4
Year of publication
1996
Pages
611 - 614
Database
ISI
SICI code
0038-1101(1996)39:4<611:STWATI>2.0.ZU;2-J
Abstract
It is shown that slow surface thermoplasma waves exist at an interface of a semiconductor with an ideal metal if thermal motion of conductio n electrons causes the spatial dispersion of the dielectric permeabili ty in the semiconductor. The spectrum and the damping of these waves a re obtained. The collisionless damping is due to the interaction of th e surface thermoplasma waves with the conduction electrons which move along a normal to the boundary without collisions through the region o f the surface wave localization. The Landau damping is exponentially s mall in comparison with the damping. Amplification of the surface ther moplasma wave can be realized by using a flow of charged particles inj ected into the semiconductor from the metal.