ANALYSIS OF QUANTUM-WIRE HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) STRUCTURE

An analytical model predicting the electrical characteristics of a hig h electron mobility transistor (HEMT) structure with a quantum well wi re (QWW) channel is proposed. Electron energy levels in the quantum wi re and electron wave functions inside and outside the quantum wire are computed. Analytical results on self-consistent calculation of the on e-dimensional electron gas (1DEG) density, as well as current-voltage characteristics in the quantum wire channel, are presented. In particu lar, we have found that the magnitude of transconductance in QWW HEMTs is over two times higher than the 2D devices.