COMPARISON OF GATE-INDUCED DRAIN LEAKAGE AND CHARGE-PUMPING MEASUREMENTS FOR DETERMINING LATERAL INTERFACE-TRAP PROFILES IN ELECTRICALLY STRESSED MOSFETS

Authors
OKHONIN S HESSLER T DUTOIT M
Citation
S. Okhonin et al., COMPARISON OF GATE-INDUCED DRAIN LEAKAGE AND CHARGE-PUMPING MEASUREMENTS FOR DETERMINING LATERAL INTERFACE-TRAP PROFILES IN ELECTRICALLY STRESSED MOSFETS, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 605-612
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
4
Year of publication
1996
Pages
605 - 612
Database
ISI
SICI code
0018-9383(1996)43:4<605:COGDLA>2.0.ZU;2-4
Abstract
Improved methods for extracting lateral spatial profiles of interface traps in electrically stressed MOSFET's from gate induced drain leakag e and charge pumping measurements are proposed, Simplified theoretical models are developped. The formal similarity of the two methods is sh own. The results obtained on submicron MOSFET after uniform (Fowler-No rdheim) and nonuniform (hot carrier) stress are compared and found to be in good agreement. The relative merits of these techniques are disc ussed.