INFLUENCE OF HOT-CARRIER TRANSPORT ON THE TRANSIENT-RESPONSE OF AN INGAAS INALAS METAL-SEMICONDUCTOR SCHOTTKY DIODE STRUCTURE/

Authors
SALEM AF BRENNAN KF
Citation
Af. Salem et Kf. Brennan, INFLUENCE OF HOT-CARRIER TRANSPORT ON THE TRANSIENT-RESPONSE OF AN INGAAS INALAS METAL-SEMICONDUCTOR SCHOTTKY DIODE STRUCTURE/, I.E.E.E. transactions on electron devices, 43(4), 1996, pp. 664-665
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
Journal title
I.E.E.E. transactions on electron devices → ACNP
ISSN journal
00189383
Volume
43
Issue
4
Year of publication
1996
Pages
664 - 665
Database
ISI
SICI code
0018-9383(1996)43:4<664:IOHTOT>2.0.ZU;2-K
Abstract
The calculated transient characteristic of a heterostructure, rectifyi ng contact is theoretically examined, It is found that hot carrier tra nsport drastically affects the output terminal characteristics of the heterostructure Schottky contact and, hence, the workings of a blockin g contact, This is of importance to the understanding of InGaAs MSM de vices in particular, as well as any structure which contains a blockin g contact in general.