A-SI TFT TECHNOLOGIES FOR LARGE-SIZE AND HIGH-PIXEL-DENSITY AM-LCDS

Authors
Citation
N. Ibaraki, A-SI TFT TECHNOLOGIES FOR LARGE-SIZE AND HIGH-PIXEL-DENSITY AM-LCDS, Materials chemistry and physics, 43(3), 1996, pp. 220-226
Citations number
21
Categorie Soggetti
Material Science
ISSN journal
02540584
Volume
43
Issue
3
Year of publication
1996
Pages
220 - 226
Database
ISI
SICI code
0254-0584(1996)43:3<220:ATTFLA>2.0.ZU;2-2
Abstract
One of the technical trends for a-Si TFTs is their application to larg e-size, high-pixel-density AM-LCDs such as XGA, EWS and HDTV. For thes e applications, the TFT performance must be improved and production th roughput must be increased to reduce the cost of manufacturing. We wil l discuss four technologies which will be most important for these pur poses. They are: (1) fully self-aligned TFT technology, (1) non-mass-s eparated ion-doping technology; (3) aluminum-gate-line process technol ogy; and (4) high-deposition-rate a-Si technology. All of them are als o suitable for current AM-LCDs such as VGA displays. These technologie s are expected to improve TFT device characteristics as well as increa se production throughput.