F. Fenske et al., CHARACTERIZATION OF SEMICONDUCTING SILICIDE FILMS BY INFRARED VIBRATIONAL SPECTROSCOPY, Materials chemistry and physics, 43(3), 1996, pp. 238-242
Semiconducting silicides of Fe, Ir, and Mn were grown as thin films mo
stly on single crystal Si substrates using solid state phase reaction,
sputtering and laser ablation of composite targets, coevaporation and
MBE. Their phonon spectra were studied by FTIR transmittance measurem
ents between 150 and 550 cm(-1). For each of the investigated silicide
s a typical IR band pattern has been found. It can be used for phase i
dentification as well as for characterizing the film quality. For micr
ocrystalline beta-FeSi2 a five-line pattern was found. The IR spectra
of Ir and Mn silicides are much more complex. Results on beta-FeSi2 sh
ow that at a higher degree of crystallinity the spectra become increas
ingly more structured.