ON THE RESISTANCE OF SILVER MIGRATION IN AG-PD CONDUCTIVE THICK-FILMSUNDER HUMID ENVIRONMENT AND APPLIED DC FIELD

Authors
Citation
Jc. Lin et Jy. Chan, ON THE RESISTANCE OF SILVER MIGRATION IN AG-PD CONDUCTIVE THICK-FILMSUNDER HUMID ENVIRONMENT AND APPLIED DC FIELD, Materials chemistry and physics, 43(3), 1996, pp. 256-265
Citations number
30
Categorie Soggetti
Material Science
ISSN journal
02540584
Volume
43
Issue
3
Year of publication
1996
Pages
256 - 265
Database
ISI
SICI code
0254-0584(1996)43:3<256:OTROSM>2.0.ZU;2-G
Abstract
Silver migration occurring in pure silver conductive thick films was m inimized by using Ag-Pd alloys. The in situ microscopic observation, u nder humid environment and an applied d.c. field, showed that the out- growth of silver dendrites from the cathode decreases with increasing (5-20%) amount of Pd in the Ag-Pd specimens, and ceases completely at 30% Pd. The enhancement of silver migration resistance with increasing Pd concentration in Ag-Pd conductors was evident by the measurements of the short circuit current between a couple of thick-him electrodes in distilled water at 5 V. Through the study of anodic potentiodynamic polarization in 0.01 M NaOH and the examination of the surface films on the thick films by X-ray diffraction and surface analyses (Auger an d ESCA), it was found that the anodic formation of PdO blocks the silv er dissolution, and minimizes the occurrence of silver migration.