FORMATION AND SCANNING ELECTRON-MICROSCOPY INVESTIGATION OF LINBO3 FILMS ON SILICON SUBSTRATES

The process of the production of LiNbO3 thin films by sputtering onto fold silicon substrates followed by heat treatment was investigated. C omposition, structure and physical properties of the films were invest igated using light refractive indices, theta - 2 theta X-ray diffracti on and scanning electron microscopy, capacitance and dielectric consta nt measurements. The amount of the crystalline phase of the stoichiome tric composition was found to be about 90%. The refractive index (lamb da = 632.8 nm) and the dielectric constant of the best samples were as high as 2.28 and 40, respectively. Insulating properties of this film structure were studied by SEM using e-beam sample charging. The poten tial images of the film structure provided evidence that current leaka ge takes place in the boundary areas between the crystallite and noncr ystallite phases.