LEAD-ZIRCONATE-TITANATE FERROELECTRIC CAPACITORS PRODUCED ON SAPPHIREAND GALLIUM-ARSENIDE SUBSTRATES

Pb(ZrxT1-x)O-3 (PZT) based ferroelectric capacitors have been produced at 600 degrees C on R-cut sapphire and Si-doped (100) GaAs substrates using a pulsed laser ablation deposition (PLAD) technique. La0.5Sr0.5 CoO3 (LSCO) conducting electrodes deposited using PLAD serve as top an d bottom electrodes. X-ray diffraction results show that the PZT film is polycrystalline and phase-pure in both cases. Electrical characteri zation of the films show remanant polarization in excess of 20 mu C/cm (2). Results of long term properties show that these capacitors: are v ery tolerant to extremely large numbers of switching cycles; retain ch arges over very long periods of time; and do not show a strong tendenc y for their dipoles to be imprinted in a preferred direction.